| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate |
2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46629f4e6bef29ccc8998cfc9bfce57e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b71ed8d1014ded9f660a7efc37fd1c00 |
| publicationDate |
2017-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9595449-B1 |
| titleOfInvention |
Silicon-germanium semiconductor devices and method of making |
| abstract |
Oxidation treatment of a Si 1-x Ge x (0<x<1) substrate forms on the substrate an interfacial layer comprised of silicon oxide and germanium oxide. The presence of germanium oxide in the interfacial layer is deleterious to the quality of the interfacial layer/Si 1-x Ge x conducting channel as evidenced by an increase in charge interface states and a decrease in carrier mobility. Germanium oxide is scavenged from the interfacial layer in a scavenging step comprising heating the interfacial layer/substrate in a hydrogen-containing reducing atmosphere at a temperature of from about 450° C. to about 800° C. to reduce the germanium oxide content of the interfacial layer to not more than about 10% by weight, for example, not more than about 1% by weight, of the weight of the scavenged interfacial layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600889-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11329143-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10020186-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019198645-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10770546-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11031508-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10629749-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11521847-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019165185-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11688812-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2020350158-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10361130-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790199-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018033615-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10622489-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10943835-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10600641-B2 |
| priorityDate |
2015-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |