| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2018-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29e8fe8ab437c31ecb8e443307b2957e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e2d9cbd89a2000e6b1b35061aca7722
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51fd586b4e2c7df058fe0fc07c6de169
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b2b1d9bdc2ee0c0285fc7c9eb6d659f9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a656cb1ec16fdd77c9db6a400eeba71b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_45b00afbe948bccc135124ebe8b1f9dc |
| publicationDate |
2019-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-109841617-A |
| titleOfInvention |
Fin Field Effect Transistor Device Structure |
| abstract |
Embodiments of the present disclosure provide a fin field effect transistor device structure including a fin structure formed on a substrate, and a first gate structure formed on the fin structure. The fin field effect transistor device structure further includes a first cap layer formed on the first gate structure, and a first etch stop layer on the first cap layer and the first gate structure. The fin field effect transistor device structure also includes a first source/drain contact structure formed on the fin structure and adjacent to the first gate structure. A portion of the first etch stop layer directly over the first capping layer is higher than another portion of the first etch stop layer directly over the first gate spacer layer. |
| priorityDate |
2017-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |