| abstract |
The metal silicate or phosphate is deposited on the heated substrate by reacting the vapor of the alkoxysilanol or alkylphosphate with the reactive metal amide, alkyl or alkoxide. For example, the vapor of tris- (tert-butoxy) silanol reacts with the vapor of tetrakis (ethylmethylamido) hafnium to deposit hafnium silicate on a surface heated to 300 ° C. The product membrane has a very uniform stoichiometry throughout the reactor. Similarly, the vapor of diisopropyl phosphate reacts with the vapor of lithium bis (ethyldimethylsilyl) amide to deposit a lithium phosphate film on the substrate heated to 250 ° C. By supplying steam in the form of alternating pulses, these same compositions are produced with a very uniform thickness distribution and excellent step coverage. |