| abstract |
An improved method for performing atomic layer deposition (ALD) is described. These improvements provide a more complete monolayer surface coating with each half cycle of the ALD process, more fully saturating the surface active sites. In one embodiment, the operating parameters are fixed for a given solvent-based precursor. In another embodiment, one operating parameter, such as chamber pressure, is changed during precursor deposition to ensure that the surface is fully saturated. [Selection figure] None |