| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d231147f38595bbe3114b758cba4a298 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-84
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-90 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-405
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31637 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8242 |
| filingDate |
2003-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7e58b3cb17a0a7aa3d9ee2c2cdd48ba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5af20c84899a14a62933b80554b8a847 |
| publicationDate |
2004-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2004296814-A |
| titleOfInvention |
Method of forming metal oxide film |
| abstract |
An object of the present invention is to provide a method for forming a metal oxide film which forms a metal oxide film having good step coverage and film quality with high throughput. Kind Code: A1 A method for forming a metal oxide film includes supplying a heated H 2 O gas onto a base film to oxidize the surface of the base film (step S1), and supplying a TaCl 5 gas to form a TaCl 5 gas. 5 gases are reacted on the surface of the oxidized base film to form a monomolecular TaCl 4 -based seed layer (step S4), and a tantalum oxide film is formed on the seed layer by CVD. Growing a bulk layer (step S7). [Selection diagram] FIG. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8896097-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7170750-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016018907-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2016014757-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9989810-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2020145084-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2015140933-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2020145084-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10353248-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2010183069-A |
| priorityDate |
2003-03-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |