| abstract |
The purpose of the present invention is to suppress the occurrence of foreign matter caused by a gas containing hydrogen and oxygen.　This semiconductor device manufacturing method involves (a) a step in which a gas that contains hydrogen and oxygen is supplied to a film which is formed on a substrate in a processing chamber set to a first pressure, reforming the film, (b) a step in which, under a second pressure at which the gas containing hydrogen and oxygen remaining in the processing chamber after performing (a) maintains a gaseous state, an inert gas is supplied into the processing chamber and gas is discharged from the processing chamber, purging the processing chamber, and (c) a step in which the processing chamber is evacuated so as to decrease the pressure in the processing chamber after performing (b) to a third pressure lower than the second pressure. |