| abstract |
The invention discloses an active element substrate and a manufacturing method thereof. The first active device comprises a first grid, a crystallized metal oxide layer, a first insulating layer, a first source electrode and a first drain electrode. The crystallized metal oxide layer is located on the first gate. A first insulating layer is sandwiched between the crystalline metal oxide layer and the first gate electrode. The diffraction pattern of the crystal phase can be observed by observing the range from the upper surface of the crystalline metal oxide to the lower surface of the crystalline metal oxide layer in the selected area diffraction mode of the transmission electron microscope. The second active element comprises a second grid electrode, a silicon semiconductor layer, a second source electrode and a second drain electrode. |