| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7595ef38818cfddb7d1d01b1b66cc051 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28114
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate |
2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_992b36d46dbb526da84fbf29dbd45a28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b707617b184df5f18c6b34e1870266b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51b7165d080db668386f665eb5e15df3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_362a7a3ebf2d57cdc74f2d8464e20f4d |
| publicationDate |
2014-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014291735-A1 |
| titleOfInvention |
Double patterning via triangular shaped sidewall spacers |
| abstract |
An intermediate semiconductor structure in fabrication includes a silicon semiconductor substrate, a hard mask of silicon nitride (SiN) over the substrate and a sacrificial layer of polysilicon or amorphous silicon over the hard mask. The sacrificial layer is patterned into sidewall spacers for mandrels of a filler material substantially different in composition from the sidewall spacers, such as a flowable oxide. The mandrels are removed such that the sidewall spacers have vertically tapered inner and outer sidewalls providing a rough triangular shape. The rough triangular sidewall spacers are used as a hard mask to pattern the SiN hard mask below. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015340233-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9064813-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021025806-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10923363-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015031201-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9768031-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022022035-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10811423-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/DE-102016114517-B4
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10269814-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014315380-A1 |
| priorityDate |
2013-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |