| abstract |
A method of forming a gate pattern of a semiconductor device is provided. This method includes forming a gate insulating film on a semiconductor substrate. A gate structure including a metal layer pattern and at least one polysilicon layer pattern is formed on the semiconductor substrate on which the gate insulating layer is formed. A selective oxidation process is performed on the product having the gate structure, wherein the selective oxidation process includes plasma oxidizing the product having the gate structure in a chamber of an oxidizing gas atmosphere containing hydrogen and oxygen.n n n n Buzzvik, Plasma, Radical, Reoxidation, Leakage Current |