| abstract |
A semiconductor device according to an embodiment of the present invention includes a substrate having first to fourth regions, a first gate dielectric layer disposed on the first region, sequentially stacked, a first gate dielectric layer, a first conductive layer, a second conductive layer, and A first gate structure including a third conductive layer, a second gate structure disposed on the second region and including a second gate dielectric layer sequentially stacked, the second conductive layer, and the third conductive layer; a third gate dielectric layer disposed on the third region, a third gate structure including a third gate dielectric layer, the second conductive layer, and the third conductive layer stacked in order; and a third gate structure disposed on the fourth region, in order a fourth gate structure comprising the stacked second gate dielectric layer, a fourth conductive layer, and the third conductive layer, wherein the first gate dielectric layer comprises a material of the second gate dielectric layer and a first element; , the third gate dielectric layer includes a material of the second gate dielectric layer and a second element. |