| abstract |
To improve reliability of a semiconductor device. A memory cell, which is a nonvolatile memory cell, includes a gate insulating film having a charge storage layer capable of retaining charges, and a memory gate electrode formed on the gate insulating film. The charge storage layer CSL is formed on the insulating film HSO1 containing hafnium, silicon, and oxygen, on the insulating layer HSO1, and on the inserting layer AL1 containing aluminum, on the inserting layer AL1, and on the hafnium, silicon, and An insulating film HSO2 containing oxygen. [Selection diagram] FIG. |