| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7624
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2019-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_19d3f00f5ebbfdcb5cc47736615a6f0d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b371841b13d4c0387cca93d73b80406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da08a5d64df4c198e27f9b261fa1baa4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d77b9b898d09421ec5c89646ffae23ba |
| publicationDate |
2020-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20200138527-A |
| titleOfInvention |
Semiconductor device including gate structure and separation structure |
| abstract |
It provides a semiconductor device including a gate structure and an isolation structure. The semiconductor device includes a first active region and a second active region; An insulating layer between the first and second active regions; A first gate structure disposed on the first active region and the insulating layer and having a first end portion on the insulating layer; A second gate structure disposed on the second active region and the insulating layer, and having a second end portion facing the first end portion of the first gate structure on the insulating layer; And a separation structure disposed between the first end portion of the first gate structure and the second end portion of the second gate structure and extending into the insulating layer. The separating structure includes a lower portion, an extended portion on the lower portion, and an upper portion on the extended portion, and a maximum width of the extended portion of the separating structure in a first direction is the first of the lower portion of the separating structure The maximum width in the first direction of the extension part of the separation structure is greater than the maximum width in the first direction of the separation structure. |
| priorityDate |
2019-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |