| abstract |
An object of the present invention is to provide a semiconductor device in which the oxygen deficiency in the metal oxide is reduced and the electrical characteristics are stable. A gate electrode, a gate insulating film formed on the gate electrode, a first metal oxide film formed on the gate insulating film, a source electrode and a drain electrode formed in contact with the first metal oxide film, and a passivation film formed on the source electrode and the drain electrode, The passivation film is a semiconductor device in which a first insulating film, a second metal oxide film, and a second insulating film are sequentially stacked. |