| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2014-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cbb92542b7771702e2dcc9d60e4684c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af8947eee09e855c4aa57be56b5ab0c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffc6703a67e52ca42dc5dffac559784a |
| publicationDate |
2014-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201442230-A |
| titleOfInvention |
Heterostructure power transistor and method of fabricating heterostructure semiconductor device |
| abstract |
A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first active layer and the second active layer. An AlSiN passivation layer is disposed on the second active layer. A first ohmic contact point and a second ohmic contact point are electrically connected to the second active layer. The first ohmic contact point and the second ohmic contact point are laterally spaced apart, and a gate is disposed between the first ohmic contact point and the second ohmic contact point. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I608568-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I669820-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I765974-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I762346-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593790-B2 |
| priorityDate |
2013-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |