| abstract |
The present disclosure provides, in a first aspect, a semiconductor device, including a semiconductor substrate and a gate structure formed over the semiconductor substrate, wherein the gate structure comprises a fin and a ferroelectric high-k material formed at least over sidewall surfaces of the fin. Herein, a first thickness defined by a thickness of the ferroelectric high-k material formed over sidewalls of the fin is substantially greater than a second thickness defined by a thickness of the ferroelectric high-k material formed over an upper surface of the fin. |