http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102214971-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2012-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-102214971-B1 |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | An object of the present invention is to reduce the hydrogen concentration and oxygen vacancies in an oxide semiconductor film, and to improve the reliability of a semiconductor device including a transistor using an oxide semiconductor film. The base insulating film has an oxide semiconductor film formed over the base insulating film, a gate insulating film formed over the oxide semiconductor film, and a gate electrode formed to overlap the oxide semiconductor film with the gate insulating film interposed therebetween, and the base insulating film has an electron spin resonance with a g value of 2.01. A signal is displayed, and the oxide semiconductor film is a semiconductor device that does not show a signal at a g value of 1.93 due to electron spin resonance. |
| priorityDate | 2011-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 69.