| abstract |
A semiconductor device having a threshold value larger than 6V and effectively preventing the occurrence of a false start and a method for manufacturing the same are provided. A semiconductor device includes a substrate 110, a channel layer 120, a barrier layer 130, a groove, a charge trap layer 220, a ferroelectric material 230, a gate 250, a source S, and a drain D. ,including. The channel layer 120 is disposed on the substrate 110. The barrier layer 130 is disposed on the channel layer 120. The barrier layer 130 has a groove, and the barrier layer 130 below the groove has a thickness. The drain D and the source S are disposed in the barrier layer 130. The charge trap layer 220 covers the bottom surface of the groove. Ferroelectric material 230 is disposed on charge trap layer 220. The gate 250 is provided in the ferroelectric material 230. [Selection] Figure 4A |