| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ec0be8ec32ada14fedf6fdff36a3f27d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1602
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7828 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7813 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-12 |
| filingDate |
2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_656ad98fe097f55d5eec22d1f9d371b3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1eb8ae02be349996a4e53a3233c4c091 |
| publicationDate |
2017-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2017011036-A1 |
| titleOfInvention |
Silicon carbide mosfet with integrated mos diode |
| abstract |
A monolithically integrated MOS channel in gate-source shorted mode is used as a diode for the third quadrant conduction path for a power MOSFET. The MOS diode and MOSFET can be constructed in a variety of configurations including split-cell and trench. The devices may be formed of silicon carbide, gallium nitride, aluminum nitride, aluminum gallium nitride, diamond, or similar semiconductor. Low storage capacitance and low knee voltage for the MOS diode can be achieved by a variety of means. The MOS diode may be implemented with channel mobility enhancement materials, and/or have a very thin/high permittivity gate dielectric. The MOSFET gate conductor and MOS diode gate conductor may be made of polysilicon doped with opposite dopant types. The surface of the MOS diode dielectric may be implanted with cesium. |
| priorityDate |
2015-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |