| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82a9e22a923eca64a02a97f0dfb493ed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42372
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76897
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate |
2022-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab4d6fad0202c20ee49cc9c2f38c8bc6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cb54a686727c99e4e7fda105e133757
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_377086ffd4dcfdd57bbce6b51d162855 |
| publicationDate |
2022-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2022226457-A1 |
| titleOfInvention |
Transistor cell with self-aligned gate contact |
| abstract |
Disclosed are apparatuses including a transistor cell and methods of fabricating the transistor cell. The transistor cell may include a substrate, an active region and a gate having a gate contact in the active region. The transistor cell may further include a first portion of a spacer of the gate contact formed from a first material, and a second portion of the spacer of the gate contact formed from a second material. |
| priorityDate |
2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |