| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2a3bb4ae410da4be8184239adc5ab1c0 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-54
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-22 |
| filingDate |
2016-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_07f6ed8ccc9497566c5c1fdb0c168556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a752fd6ad2611f628e6ac8c911a6a173
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52c9d116d449d209a57f02d0227a7c92
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40df519406a4790c8808e930732e011d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_531b948f38674f98a728c6b4fd789996 |
| publicationDate |
2019-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I658166-B |
| titleOfInvention |
Method for forming metal-insulator-semiconductor structure and method for manufacturing integrated circuit |
| abstract |
The invention provides a method for forming a metal-insulator-semiconductor structure on the surface of a substrate. The method includes: providing a substrate including a semiconductor surface; depositing a metal chalcogenide film on the semiconductor surface; and depositing a metal layer on the metal chalcogenide film; wherein the metal chalcogenide is deposited The thin film includes an atomic layer deposition (ALD) process, which includes contacting the semiconductor surface with metal precursors and chalcogen precursors alternately and sequentially.nn n n In addition, the present invention provides a method for manufacturing an integrated circuit. |
| priorityDate |
2015-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |