| abstract |
The invention discloses a semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductors. Wherein, the method includes: providing a semiconductor substrate, the semiconductor substrate includes a first region and a second region spaced apart from each other, the surfaces of the first region and the second region have a first oxide layer; performing a nitriding process to form a nitride barrier layer on the top area of the first oxide layer on the surface of the first region and the second region; removing the nitrided first oxide layer on the second region an oxide layer; performing oxidation treatment to form a second oxide layer on the surface of the second region. |