| abstract |
Gate-all-around integrated circuit structures fabricated using alternate etch selective material, and the resulting structures, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires (106). A gate stack is over the vertical arrangement of horizontal nanowires. A pair of dielectric spacers (236) is along sides of the gate stack and over the vertical arrangement of horizontal nanowires. A metal oxide material (124''') is between adjacent ones of the vertical arrangement of horizontal nanowires in a corner defined by one of the pair of dielectric spacers, a side wall of the gate stack and one of the nanowires (106). |