| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f40048737e3cdf934f061cfed640fd21
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eb2961d4b1518c3f689e698ec2270ceb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-91 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-00 |
| filingDate |
2008-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd8e494b62a2d58a487d9cbd7dc76890
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3017f33abff96876ba65ed78b53a409c |
| publicationDate |
2009-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2009014830-A1 |
| titleOfInvention |
Method of manufacturing semiconductor device |
| abstract |
A method of manufacturing a semiconductor device including at least one of the following steps: Forming an insulating film having at least one trench on and/or over a semiconductor substrate. Forming a metal film on and/or over a surface of an insulating film, including inside the trench. Forming a metal seed layer on and/or over the metal film inside the trench. Forming a metal plating layer on and/or over the metal seed layer to fill the trench. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2013163081-A1 |
| priorityDate |
2007-07-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |