| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0688 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 |
| filingDate |
2022-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_148ccb70a31b774cd1052eac545be7c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afe2716f5f3ed8d1530c91a6d6d24f31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2b16337882c37b12eca7f425dd9100c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca295a5c021bdbbdea27eeaee597b73f |
| publicationDate |
2022-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102022100347-A1 |
| titleOfInvention |
THIN FILM TRANSISTOR WITH A DIELECTRIC DIFFUSION BARRIER AND PROCESS FOR ITS MANUFACTURE |
| abstract |
A semiconductor device includes: an insulating layer embedding a gate electrode and disposed over a substrate; a stack of a gate dielectric comprising a gate dielectric material, a diffusion barrier dielectric lining comprising a diffusion barrier dielectric material, and an active layer over a top surface of the gate electrode; and a source electrode and a drain electrode contacting a respective part of a top surface of the active layer. The diffusion barrier dielectric material is distinct from the gate dielectric material and is selected from a metal oxide dielectric material and a silicon compound dielectric, and it suppresses loss of metallic elements during later annealing processes. |
| priorityDate |
2021-02-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |