| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_870e3b104c1dab17055e2674c6bedd54 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2022-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c9fed23e9bfd4ae8787e64bef8449240 |
| publicationDate |
2022-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2022278217-A1 |
| titleOfInvention |
High dielectric constant metal gate mos transistor and method for making the same |
| abstract |
The present application discloses a high dielectric-constant metal gate MOS transistor and a method for making the same. The gate structure is formed by stacking a gate dielectric layer and a metal gate; the top surface of the metal gate is arranged to be lower than the top surface of the zeroth interlayer film, and a first groove is formed on the top surface of the metal gate; a gate top plug formed by stacking a first barrier layer and a first oxide layer is formed in the first groove, the first barrier layer is arranged on the bottom surface and the side surfaces of the first groove, and the first oxide layer fully fills the first groove; and the first barrier layer is made of a material that blocks oxygen ions or fluorine ions from diffusing into the high dielectric-constant layer of the gate structure. |
| priorityDate |
2021-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |