| abstract |
A semiconductor device includes a substrate, a channel layer, a barrier layer, a well, a charge trapping layer, a ferroelectric material, a gate, a source, and a drain. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The barrier layer has a recess and a portion of the barrier layer under the recess has a thickness. The source and the drain are arranged on the barrier layer. The charge trapping layer covers the bottom of the well. The ferroelectric material is disposed on the charge trapping layer. The gate is disposed on the ferroelectric material. |