| abstract |
The method for fabricating a semiconductor device is to fabricate a semiconductor device including GaN (gallium nitride) that composes a semiconductor layer and includes a step of forming a gate insulating film. In the step, at least one film selected from the group consisting of a SiO 2 film and an Al 2 O 3 film is formed on a nitride layer containing GaN by using microwave plasma and the formed film is used as at least a part of the gate insulating film. |