| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7b84a2e2bcc8c875734733c2afe72fe1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10344
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01022
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-1033 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7787
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-778
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42364
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-2003 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 |
| filingDate |
2014-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7cbb92542b7771702e2dcc9d60e4684c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af8947eee09e855c4aa57be56b5ab0c2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ffc6703a67e52ca42dc5dffac559784a |
| publicationDate |
2015-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2015076510-A1 |
| titleOfInvention |
Heterostructure Power Transistor with AlSiN Passivation Layer |
| abstract |
A heterostructure semiconductor device includes a first active layer and a second active layer disposed on the first active layer. A two-dimensional electron gas layer is formed between the first and second active layers. An AlSiN passivation layer is disposed on the second active layer. First and second ohmic contacts electrically connect to the second active layer. The first and second ohmic contacts are laterally spaced-apart, with a gate being disposed between the first and second ohmic contacts. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017358652-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016141372-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343541-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10249727-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106935640-A |
| priorityDate |
2013-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |