Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ddcb273a108a5d8472b335280098e06 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-298 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-291 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-339 |
filingDate |
1980-08-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
1983-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3bac3cedfe8ca00014c041d2577a752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d83985d7c9d4de78ad0c63ada564edb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37c792ff3ecb0ccceddadb784f618b9e |
publicationDate |
1983-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CA-1152227-A |
titleOfInvention |
Process of reducing density of fast surface states in mos devices |
abstract |
ABSTRACT OF THE DISCLOSURE Fast surface states in MOS devices, such as SCCDs, are reduced by depositing a relatively thin amorphous layer containing silicon and hydrogen onto the SiO2 surface of such devices and annealing the resultant device in a non-oxidizing atmosphere for brief periods of time at a temperature in excess of the deposition temperature for the amorphous layer but below about 500°C so that free valences at the Si-SiO2 interface region are saturated with hydrogen. Surface state densities of about 4 x 108 cm-2 eV-1 and SCCDs having .epsilon. = 1.10-5 can be achieved via this process. The process is useful in producing SCCDs with low surface state densities and other MOS devices having low surface generated dark currents. |
priorityDate |
1979-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |