http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-514995-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28229
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
filingDate 2001-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_218b6a33a5e28e65ae50f82099f91f01
publicationDate 2002-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-514995-B
titleOfInvention Semiconductor device and method for fabricating a semiconductor device
abstract The present invention is a semiconductor device having a gate structure comprising a gate oxide layer formed on a semiconductor substrate, a conductive layer formed on the gate oxide layer, and a metal oxide layer formed at the interface between the gate oxide layer and the conductive layer, thereby forming a metal oxide layer having a high dielectric constant to produce a gate structure having stable electrical parameters and improved functional performance.
priorityDate 2000-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5359268
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID15625
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23985
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419491804
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425762086
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419553838
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577462
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419554741
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23964
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID90455
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID458357694
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23963
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415776239
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID82895
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559362
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559477
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23968
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23940
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID482532689
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559503
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID14808
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID93091
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23987
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577374

Total number of triples: 54.