| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31155
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02159
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3115 |
| filingDate |
1999-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78b20db8af7d233d48132842b44ae5cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_489aace57c360aaa0a33804f5baef30b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab08835469418fa71372b55e8d3136af
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1a9d3bce049f33b3f507267a09f8788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f10a4fb503a5e0ad8fe2b3fbf48fb832 |
| publicationDate |
2001-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20010060567-A |
| titleOfInvention |
Method of forming a gate dielectric film in a semiconductor device |
| abstract |
The present invention relates to a method for forming a gate oxide film of a semiconductor device, which has a high defect density and oxide trap charge and a poor leakage current characteristic when the gate oxide film is formed using aluminum oxide (Al 2 O 3 ). In order to solve the problem, any one of silicon, zirconium, and niobium is added to the aluminum oxide film so as to improve the electrical characteristics of the device and reduce the manufacturing cost by improving leakage current characteristics while having a high dielectric constant. A method of forming a gate oxide film of a semiconductor device is disclosed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100445407-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20030018134-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100834453-B1 |
| priorityDate |
1999-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |