http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006096009-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6dbbf37541769e5b2694608c0440753d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E02F3-413 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2006-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc8c1087a0f9bf02d681b1ef41e942bc |
| publicationDate | 2006-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | WO-2006096009-A1 |
| titleOfInvention | High-pressure hydrogen annealing for mosfet |
| abstract | The present invention relates to a high pressure hydrogen annealing method for MOSFET semiconductor device, and more particularly, to effectively remove a supersaturated hydrogen on a high-k insulating layer treated by a high pressure hydrogen annealing so that the reliability of a device is improved. In other words, in order to decrease an interfacial charge, it is required to perform a high density and a high pressure hydrogen annealing. In this case, a hydrogen is included at an interface and a bulk of a high-k insulating layer, resulting in improving the initial operational characteristics of a device by passivating interfacial charge existing at an interface, but deteriorating the reliability of a device due to the hydrogen remaining in the insulating bulk. Therefore, in the present invention, a high pressure hydrogen annealing is performed and the subsequent annealing is performed under an inert gas atmosphere for a long time to effectively remove hydrogen molecules remaining at the bulk. |
| priorityDate | 2005-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.