| abstract |
A transistor, including an antiferroelectric (AFE) gate dielectric layer is described. The AFE gate dielectric layer may be crystalline and include oxygen and a dopant. The transistor further includes a gate electrode on the AFE gate dielectric layer, a source structure and a drain structure on the substrate, where the gate electrode is between the source structure and the drain structure. The transistor further includes a source contact coupled with the source structure and a drain contact coupled with the drain structure. |