http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060098864-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ae372ddaa494f2face39592b0429cc16 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E02F3-413 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2005-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_43ad7c032151d892efbd4ed8878c7283 |
| publicationDate | 2006-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060098864-A |
| titleOfInvention | High pressure hydrogen heat treatment method for MOSF F semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high pressure hydrogen heat treatment method for a MOSFET semiconductor device, characterized in that the reliability of the device is improved by effectively removing hydrogen present by supersaturation in the high dielectric constant insulating film device to which the high pressure hydrogen treatment is applied.n n n In other words, in order to reduce the interfacial charge, high concentration and high pressure hydrogen treatment is essential, but in this case, hydrogen is contained in the interface and bulk of the high dielectric constant insulating film, and as a result, the initial operation characteristic of the device is the interfacial charge of hydrogen present at the interface. Although improved due to passivation, the device's reliability is deteriorated due to hydrogen remaining in the insulating film bulk.n n n Therefore, in order to solve this problem, after the high-pressure hydrogen treatment, the subsequent heat treatment is carried out in an inert gas atmosphere for a long time, it is characterized in that the hydrogen molecules remaining in the bulk effectively removed.n n n n High dielectric constant insulating film, high pressure hydrogen heat treatment, deuterium, forming gas |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160031726-A |
| priorityDate | 2005-03-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.