| abstract |
Methods and structures are provided for providing a film-forming process (e.g., of a mono-functional layer) to achieve work function adjustment. In various embodiments, a gate dielectric layer is formed over the substrate, and a mono-functional metal layer is deposited over the gate dielectric layer. A fluorine-based treatment of the mono-functional metal layer is then performed, wherein the fluorine-based treatment removes the oxidized layer from the top surface of the mono-functional metal layer to form the treated mono-functional metal layer. In some embodiments, after performing the fluorine-based treatment, another metal layer is deposited on the treated mono-functional metal layer. |