http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20020045263-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4916 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2000-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f1b9478a164ed53c6f55b810918dd59 |
| publicationDate | 2002-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20020045263-A |
| titleOfInvention | Method of manufacturing a transistor in a semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a transistor of a semiconductor device. In the process of forming a gate electrode made of a polysilicon germanium layer, implanting boron, and performing heat treatment, nitrogen is injected together with boron ions, but nitrogen is deeper than boron. By injecting and accumulating on the gate oxide layer, the diffusion of boron in the polysilicon germanium layer is blocked first, and the diffusion of boron in the nitrogen oxide accumulated on the gate oxide layer is blocked secondly. Disclosed is a gate electrode method of a semiconductor device capable of effectively suppressing the phenomenon and improving the electrical characteristics of the device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100451039-B1 |
| priorityDate | 2000-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.