| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38ed56a4b4e8e2315b2b3308bffedb3f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-283
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate |
2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2005-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_edd56c0f9f6ece05de768bffb5c1b7cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3417f48f7e64235571cb9b4c1574fdc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_269ba5a57ca37b974ce73ed211ce82cd
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89eacb4ad86a25fd597e6f0966ebb8a5 |
| publicationDate |
2005-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-6949471-B2 |
| titleOfInvention |
Method for fabricating poly patterns |
| abstract |
A method of fabricating polysilicon patterns. The method includes depositing polysilicon on a substrate. The polysilicon may be doped or pre-doped depending upon the application. A mask layer is applied and patterned. Thereafter, the polysilicon is etched to form the polysilicon patterns and an oxidizing step is performed. The mask layer is removed after the oxidizing step is performed. |
| priorityDate |
2003-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |