| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_986d0ab29fa7910a46cd21a12d682fe4 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3006
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2009-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4e04a6f0e219b5a45c33dc08cd78ab67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2537d6ebbb891141acbaf4436c0cc53b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_be9196f1862ac25a5da9970653ac2ab7 |
| publicationDate |
2010-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-2164094-A1 |
| titleOfInvention |
A method for reducing fermi-level-pinning in a non-silicon channel mos device |
| abstract |
A method to reduce (avoid) Fermi Level Pinning (FLP) in high mobility semiconductor compound channel such as Ge and III-V compounds (e.g. GaAs or InGaAs) in a Metal Oxide Semiconductor (MOS) device. The method is using atomic hydrogen which passivates the interface of the high mobility semiconductor compound with the gate dielectric and further repairs defects. The methods further improves the MOS device characteristics such that a MOS device with a quantum well is created. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9231148-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2871683-A1 |
| priorityDate |
2008-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |