| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28158
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02252
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823462
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02071 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2019-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a7691f55147342275fe72f36639164e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2f64841b1121df715cfd6b04adedf248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_879538881fbb97c4706a00c820b384a0 |
| publicationDate |
2021-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
DE-102019107491-B4 |
| titleOfInvention |
Setting the threshold voltage by metastable plasma treatment |
| abstract |
Method comprising: Forming a first high-k dielectric layer (156) over a first semiconductor region (20); Forming a second high-k dielectric layer (156) over a second semiconductor region (20); Forming a first metal layer having a first portion (162) over the first high-k dielectric layer (156) and a second portion (262) over the second high-k dielectric layer (156); Forming an etch mask (66) over the second portion (262) of the first metal layer; Etching the first portion (162) of the first metal layer, the etch mask (66) protecting the second portion (262) of the first metal layer; Ashing the etch mask (66) using metastable plasma; and Forming a second metal layer (164) over the first high-k dielectric layer (156); wherein nitrogen gas and helium gas are fed into a first inlet (310A) of a shower head (304) and hydrogen gas is fed into a second inlet (310B) of the shower head (304) so that it mixes with radicals generated from the nitrogen gas and the helium gas be generated. |
| priorityDate |
2019-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |