| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32357
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32477
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28176
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
| filingDate |
2016-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b5599b639df023da50889cc0748aa05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2b61018b969646df16f156070f487246
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ccbfb78ee675fbc38a085d8ea9f191e8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7afe501edae5cb19ed01f02a761b6186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_607919b5ac3a79024e733fcc7f0f2ddc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a6a84cfb21aee2a9addff6d480228a42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_191b5a840358bb61b352930a0f226c6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a8a2bf1e386e337d4c18a9254a05a1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84b3fde0e1eab19f30b0ece8488038e9 |
| publicationDate |
2017-03-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-201711094-A |
| titleOfInvention |
Processing chamber |
| abstract |
Embodiments of the present invention are generally directed to methods and apparatus for plasma processing a processing chamber. The substrate can be placed in a processing chamber having a gate stack formed thereon, and a hydrogen containing plasma can be used to process the gate stack to cure defects in the gate stack. As a result of the hydrogen-containing plasma treatment, the gate stack has lower leakage and improved reliability. HX+ to protect the processing chamber from hydrogen-containing plasmanThe ions and H* radicals can be treated with a plasma treatment chamber without the substrate being placed in the processing chamber and prior to the hydrogen-containing plasma treatment. Furthermore, the components of the processing chamber made of dielectric material may be coated with a ceramic coating comprising cerium-containing oxide to protect these components from plasma. |
| priorityDate |
2015-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |