http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0294259-A2

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filingDate 1988-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e15c9ab4527f1264e820953b83d0a8ff
publicationDate 1988-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-0294259-A2
titleOfInvention Screening of gate oxides on semiconductors
abstract Testing of the gate oxides (14A) of all the transistors of a single die in a silicon wafer to be diced into a plurality of dice in a single operation is effected at an intermediate stage of the fabrication process by providing a metal layer (20) contacting selectively each of the gate electrodes (16) of a die at an intermediate stage of the processing and providing between the layer (20) and the wafer a voltage (22) of amplitude (V s ) insufficient to cause significant tunneling current through good gate oxides but sufficient to cause significant tunneling current through defective gate oxides.
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priorityDate 1987-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 29.