| abstract |
Apparatus and methods for forming a semiconductor structure include depositing a doped stack having a first surface on top of a high-k dielectric layer, wherein the doped stack comprises at least one first metal layer having a first surface, a first At least one second metal layer comprising an aluminum dopant and a first surface, and at least one third metal layer on top of the first surface of the second metal layer, the second metal layer comprising On top of first surface ―; Depositing an annealing layer on top of the first surface of the doping stack; Annealing the structure to diffuse at least the first aluminum dopant into the high-K dielectric layer; Removing the annealing layer; And depositing at least one work function layer on top of the first surface of the doping stack. |