| abstract |
The present disclosure relates to semiconductor devices and methods. A method of forming a semiconductor device having an improved work function layer and a semiconductor device formed by the method are disclosed. In one embodiment, a method includes: depositing a gate dielectric layer on a channel region over a semiconductor substrate; depositing a first p-type work function metal on the gate dielectric layer; The metal is subjected to an oxygen treatment; and after the oxygen treatment is performed, a second p-type work function metal is deposited on the first p-type work function metal. |