abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, wherein the semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and an electrode formed on the first insulating film; And a combination of nitrogen, silicon, oxygen and nitrogen, and a halogen element, and the maximum element concentration of the halogen element in the first insulating film is 10 20 pieces / cm 3 or more and 10 21 pieces / cm 3 or less. This improves the dielectric breakdown resistance of the insulating film and the like, and increases the reliability of the insulating film. |