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filingDate 1998-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2002-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2002-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-100312918-B1
titleOfInvention Semiconductor device and Manufacturing method thereof
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method for manufacturing the same, wherein the semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, and an electrode formed on the first insulating film; And a combination of nitrogen, silicon, oxygen and nitrogen, and a halogen element, and the maximum element concentration of the halogen element in the first insulating film is 10 20 pieces / cm 3 or more and 10 21 pieces / cm 3 or less. This improves the dielectric breakdown resistance of the insulating film and the like, and increases the reliability of the insulating film.
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