| Predicate |
Object |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823437
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7842
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2004-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2011-10-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101070845-B1 |
| titleOfInvention |
Method for forming structures in finfet devices |
| abstract |
The semiconductor device includes a first fin structure 810, a second fin structure 810, and a third fin structure 210. First and second fin structures 810 include a single crystal silicon material. The third fin structure 210 is located between the first fin structure 810 and the second fin structure 810 and includes a dielectric material. The third fin structure 210 causes stress induced in the single crystal silicon material of the first fin structure 810 and the second fin structure 810. n n FinFET, Fin Structure, Monocrystalline |
| priorityDate |
2003-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |