http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0326204-A3
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76885 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 1989-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1989-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | EP-0326204-A3 |
| titleOfInvention | Method for realizing an electrical contact to an electronic device |
| abstract | A method of enabling electrical connection to a substructure n(10) forming part of an electronic device, such as an integrated ncircuit, is described in which an aluminium-containing nelectrically conductive level (1) is provided on a surface (12) nof the substructure (10), an insulating layer (2) is deposited so nas to cover the aluminium-containing electrically conductive nlevel (1), a photosensitive resist layer (3) is provided on the ninsulating layer and a plasma etching step is then used to etch naway insulating material so as to expose an electrically nconductive surface to enable electrical connection to be made to nthe level (1). The insulating material (2) may be etched through na window in the resist layer (3) so as to form a via (14) or the nresist layer (3) and insulating material (2) may be etched nuniformly to provide a planarised surface. In the method, a layer n(4) of another conductive material which is free of aluminium is nprovided on the level (1) prior to covering the level (1) with ninsulating material (2) so that the plasma etching step exposes nan electrically conductive surface (4a) of the layer (4) of the nsaid other conductive material which thus acts to mask the level n(1) to prevent catalytic reaction between the aluminium and nconstituents in the plasma. |
| priorityDate | 1988-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.