http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2153239-A1

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filingDate 2008-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a85025a969863ca12e4c6d0a29fbe55a
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publicationDate 2010-02-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber EP-2153239-A1
titleOfInvention Method for compensation of process-induced performance variation in a mosfet integrated circuit
abstract An automated method for compensating for process-induced variations in threshold voltage and drive current in a MOSFET integrated circuit. The method's first step is selecting a transistor for analysis from the array. The method loops among the transistors of the array as desired. Next the design of the selected transistor is analyzed, including the steps of determining threshold voltage variations induced by layout neighborhood; determining drive current variations induced by layout neighborhood. The method then proceeds by attempting to compensate for any determined variations by varying the length of the transistor gate. The method can further include the step of identifying any shortcoming in compensation by varying contact spacing.
priorityDate 2007-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 21.