http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2007145451-A1
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-94 |
| filingDate | 2006-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4ab6796c8cb288a66959dad9df89f952 |
| publicationDate | 2007-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-2007145451-A1 |
| titleOfInvention | Semiconductor device having vertical-type channel and method for fabricating the same |
| abstract | A semiconductor device includes an active region including a surface region and a first recess formed below the surface region, the active region extending along a first direction; a device isolation structure provided on an edge of the active region; a gate line traversing over the surface region of the active region along a second direction orthogonal to the first direction; a second recess formed in the device isolation structure to receive a given portion of the gate line into the second recess; a first junction region formed in the active region beneath the first recess and on a first side of the gate line; and a second junction region formed on a second side of the gate line and above the first junction region, wherein the first and second junction regions define a vertical-type channel that extends along lateral and vertical directions. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011278660-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-3061124-A4 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105493252-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2017069758-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2008099835-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9245895-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10263112-B2 |
| priorityDate | 2005-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.