| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fd83260a96356882b5f50dd097411a72 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-43
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8249
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-732
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8222 |
| filingDate |
2002-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f5414221271568ae146b58b9d88fc1c |
| publicationDate |
2002-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20020090352-A |
| titleOfInvention |
Semiconductor device and method of fabricating same |
| abstract |
The semiconductor device increases the maximum oscillation frequency f max of the bipolar transistor. A stopper dielectric layer is formed on the substrate to cover the transistor region and the device isolation insulator. An interlayer dielectric layer is formed on the stopper dielectric layer. The base contact plug formed in the interlayer dielectric layer is placed in contact with the grafting base region near its bottom end corner on the element isolation insulator. Therefore, the base contact need not be in full contact with the grafting base area, which means that the grafting base area can be narrowed without increasing the base resistance R b and that the collector-base capacity C cb is not reduced. Further, the short circuit between the grafting base region and the collector region can be effectively suppressed by the stopper dielectric layer. |
| priorityDate |
2001-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |