http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-950015663-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-18 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 1993-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 1995-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-950015663-A |
| titleOfInvention | Method for manufacturing gate oxide of thin film transistor |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a gate oxide film of a liquid crystal thin film transistor, and by forming an oxide film having a predetermined thickness on the entire surface of a substrate on which a semiconductor (or metal film) pattern is formed, the step difference of the device can be reduced. In addition to reducing disconnection defects, it is possible to form a gate oxide film having excellent insulation property through only an oxidation process without adding a complicated process, thereby reducing leakage current, and also an oxide film of another film quality. It is not necessary to prepare a countermeasure due to the variation of the threshold voltage. Especially, in the case of the polysilicon thin film transistor, the gate current is remarkably reduced when the above process is applied, so that the on current is increased to improve device characteristics. A highly reliable thin film transistor can be realized. It is good. |
| priorityDate | 1993-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.